Influence of γ-Radiation on Optical and Electric Properties of 90Bi2Te3-10Bi2Se3 Doped Films of P-and N-Types Conductivity

There has been investigated the influence of γ-radiation on absorption spectra in energy range 1÷6.5 eV and temperature dependence of 90Bi2Te3-10Bi2Se3 film conductivity of p-and n-types conductivity within 1÷5 eV. It is established that γ-irradiation of films with intensity ρ=1.384 rad/sec brings about the formation of temporary lattice defects. DOI: 10.4018/ijcce.2013010101 2 International Journal of Chemoinformatics and Chemical Engineering, 3(1), 1-7, January-June 2013 Copyright © 2013, IGI Global. Copying or distributing in print or electronic forms without written permission of IGI Global is prohibited. refrigerators on their base (Goltsman et al., 1985; Abdullayev, 2002). By investigating the influence of various type of radiation on Bi2Te3 properties two problems are especially of high-priority: 1. Just how strongly the electric properties of the materials change by irradiation. 2. How fast and by what external effects the restoration of original properties are taken place. γ-radiation is the electromagnetic radiation with λ ≤ 2∙-10 m which can be considered as a plane wave with frequency ω, wave vector k and intensity I. By short waves like these the wave properties of γ-radiation have been manifested poorly. There have been put forward corpuscular properties. γ-radiation is the gamma-quantum flow with energy, frequency, impulse: Eγ = ћω, ω =2πc/λ, p = ћk(k= 2π/λ). Smith has considered Co gamma –irradiation on Hall constant R and specific resistance of pand nBi2Te3 quasi-stoichiometric single crystal samples at 77K before and after irradiation; current heads for parallel to spall planes. There have been found out two effects on irradiated samples: the first one has been appeared after small irradiation dose (from 1016-1018 ph /cm2) and connects with “electron” excitement, the second one has been observed at exposure more than 1018 ph/cm2 and caused by lattice distortions (Smith et al., 1963). Electron effect leads to decrease of Hall constant and specific resistance of n-Bi2Te3 and their growth in p-Bi2Te3. It does not depend on radiation energy and saturates after very small dose. Given state is not stable. Annealing at room temperature for 10-24 hours returns p and R to initial values and defect annealing is in agreement with energy Eanneal.=0.7±0.1eV (Dins et al., 1960; Vavilov et al., 1963). Smith has suggested that in this case the decay of complexes formed from several interstitial atoms of Te being between quintets has been taken place. By cooling up to room temperature dissociated atoms come together at complexes. Reversibility on the effect is explained by this fact. Before the second stage Eanneal is equal to 0.9±0.1 eV that is very close to vacancy motion energy in magnitude in Bi2Te3. In this work influence of γ-irradiation on optical (within 1÷6eV) and electric properties (within 1÷5V) of 90Bi2Te3-10Bi2Se3 film polycrystals of p-and n-type conductivity have been investigated. METHOD OF FILM PRODUCTION